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Siemens 3NE1227-2 SITOR Fuse Link: 250A, 690V AC

Siemens 3NE1227-2 SITOR Fuse Link

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ManufacturerSiemens
Part number3NE1227-2
Type SITOR Fuse Link
Size NH1
Current Rating (In) 250 A
Utilization Category gR
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SITOR fuse link NH1 size 250A current rating gR utilization category 690V AC / 250V DC Front indicator Blade contacts

The Siemens 3NE1227-2 is a high-performance SITOR fuse link designed for demanding industrial power applications. Built in NH1 size with blade contacts, this fuse ensures fast and reliable protection of sensitive power electronics such as converters, rectifiers, and inverters.

With a rated current of 250A, AC voltage up to 690V, and DC voltage up to 250V, this gR characteristic fuse offers both short-circuit and overload protection. The integrated front indicator allows quick visual inspection, reducing downtime and improving maintenance efficiency.

Stanlo Automation, your trusted veteran-owned surplus distributor, offers the Siemens 3NE1227-2. We are committed to providing high-quality components and exceptional customer service.

TypeSITOR Fuse Link
SizeNH1
Current Rating (In)250 A
Utilization CategorygR
Voltage Rating AC (Un AC)690 V
Voltage Rating DC (Un DC)250 V
IndicatorFront indicator
ContactsBlade contacts
Semiconductor protection
Power electronics
Converters
Rectifiers
Inverters
Industrial electrical systems
Compatible with NH1 fuse bases and switch disconnectors.
Siemens 3NE12272
The Siemens 3NE1227-2 is a specialized gR fuse for semiconductor protection. For exact replacement guidance, refer to Siemens' technical documentation or consult with an electrical engineer.
Expert tip
The gR characteristic is crucial for protecting power semiconductors, offering rapid response to fault conditions that could otherwise lead to device destruction.
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What is the advantage of the 'gR' class for the Siemens 3NE1227-2 fuse link?
The 'gR' class of the Siemens 3NE1227-2 signifies full-range semiconductor protection. This provides very fast-acting tripping characteristics, essential for safeguarding sensitive semiconductor devices from severe overcurrents and short circuits.